smd type mosfet 1 www.kexin.com.cn 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3 source p-channel mos fet for high-speed switching 2SJ181S features low on-resistance high speed switching low drive current no secondary breakdown suitable for switching regulator and dc-dc converter absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss -600 v gate to source voltage v gss 15 v drain current i d(ds) -0.5 a drain peak current * i d(pulse) -1 a channel dissipation (tc=25 ) p ch 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s, duty cycle 1%
2 smd type mosfet www.kexin.com.cn electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =-10ma,v gs = 0 -600 v gate to source breakdown voltage v gss i g = 100 a, v ds =0 15 v gate to source leak current i gss v gs = 12 v, v ds =0 10 a zero gate voltage drain current i dss v ds = -500 v, v gs =0 -100 a gate to source cutoff voltage v gs(off) i d =-1ma,v ds =-10v -2 -4 v static drain to source on stateresistance r ds(on) i d =-0.3a,v gs =-10v 15 25 forward transfer admittance |y fs |i d =-0.3a,v ds = -20 v 0.3 0.45 s input capacitance c iss v ds =-10v,v gs = 0, 220 pf output capacitance c oss f = 1 mhz 55 pf reverse transfer capacitance c rss 13 pf turn-on delay time t d(on) i d =-0.3a,v gs =-10v, 7 ns rise time t r r l =100 20 ns turn-off delay time t d(off) 35 ns fall time t f 35 ns body to drain diode forward voltage v df i f =-0.5a,v gs =0 -0.85 v body to drain diode reverse recovery time t rr i f =-0.5a,v gs =0,dif/dt=50a/ s 230 ns 2SJ181S
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